ISO INTERNATIONAL STANDARD 23812 First edition 2009-04-15 Surface chemical analysis Secondary-ion mass spectrometry - Method for depth calibration for silicon using multiple delta-layer reference materials Analyse chimique des surfaces-Spectrometrie de masse des ions secondaires Methode pour I'etalonnage de la profondeur pour le silicium a I'aide de materiaux de reference a couches delta multiples Reference number ISO 23812:2009(E) @ ISO 2009 nse from IHS Not for Resale ISO23812:2009(E) PDF disclaimer This PDF file may contain embedded typefaces. In accordance with Adobe's licensing policy, this file may be printed or viewed but shall not be edited unless the typefaces which are embedded are licensed to and installed on the computer performing the editing. In accepts no liability in this area. Adobe is a trademark of Adobe Systems Incorporated. Details of the software products used to create this PDF file can be found in the General Info relative to the file; the PDF-creation parameters were optimized for printing. Every care has been taken to ensure that the file is suitable for use by IsO member bodies. In COPYRIGHTPROTECTEDDOCUMENT @ ISO2009 All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from either isO at the address below or IsO's memberbody in the country of the requester. ISo copyright office Case postale 56.CH-1211Geneva 20 Tel.+4122749 0111 Fax + 41 22 749 09 47 E-mail copyright@iso.org Web www.iso.org Published in Switzerland @ ISO 2009 - All rights reserved ted without license from IHS Not for Resale ISO 23812:2009(E) Contents Page Foreword Introduction 1 Scope 2 Normative references 3 Terms and definitions 4 Symbols and abbreviated terms ... 5 Requirements on multiple delta-layer reference materials 6 Measurementprocedures 7 Calibration procedures... 7.1 Principle of calibration 7.2 Determination of sputtering rate for reference material 7.3 Calibration of the depth scale for test specimens 7.4 Uncertainty in calibrated depth.... 8 Expressionofresults.... 8.1 Calibration under the same sputtering conditions as used for the reference material 8.2 Calibration using a sputtering rate different from that of the test specimen .. 8.3 Calibration with respect to concentration.... 9 Test report ..... 9 Annex A (informative) Projected range of oxygen-ion in silicon. Annex B (informative) Estimations of peak shifts due to atomic mixing Annex C (informative) Estimations of peak shift due to peak coalescence.. 14 Annex D (informative) Derivation of uncertainty. 17 Bibliography ii from IHS Not for Resi